symbol v ds v gs i dm t j , t stg symbol typ max 30 40 61 75 r q jl 4.5 6 absolute maximum ratings t a =25c unless otherwise noted 5.6 pulsed drain current b 30 12 gate-source voltage drain-source voltage a 55 continuous drain current a maximum units parameter t a =25c t a =70c i d 7.2 v junction and storage temperature range c -55 to 150 t a =70c 1.0 power dissipation a t a =25c w p dsm 1.6 maximum junction-to-ambient a steady-state c/w t 10s r q ja c/w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a AON5802B features v ds (v) = 30v i d = 7.2a (v gs = 4.5v) r ds(on) < 19 m w (v gs = 4.5v) r ds(on) < 20 m w (v gs = 4.0v) r ds(on) < 23 m w (v gs = 3.1v) r ds(on) < 30 m w (v gs = 2.5v) the AON5802B/l uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. this device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common-drain configuration. AON5802B and AON5802Bl are electrically identical. - rohs compliant -AON5802Bl is halogen free top view bottom view d1/d2 dfn 2x5 g1 s1 s1 g2 s2 s2 g1 s1 s1 g2 s2 s2 g1 d1 1 s1 rg g2 d2 1 s2 rg common-drain dual n-channel enhancement general description mode field effect transistor www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 10 m a bv gso 12 v v gs(th) 0.6 1.1 1.5 v i d(on) 55 a 12 15.5 19 t j =125c 19 23.5 29 v gs =4.0v, i d =5a 13 16 20 v gs =3.1v, i d =5a 14 18 23 17 23 30 g fs 32 s v sd 0.71 0.9 v i s 2.5 a c iss 920 1150 pf c oss 105 pf c rss 52 pf r g 1.7 2.5 k q g (10v) 17.5 24 nc q g (4.5v) 7.5 10 nc q gs 2.9 nc q gd 2.5 nc t d(on) 320 420 ns t r 550 ns t d(off) 4.35 s t f 2.4 s t rr 21.6 26 ns q rr 10 nc body diode reverse recovery charge i f =7a, di/dt=100a/ m s turn-on rise time turn-off delaytime body diode reverse recovery time i f =7a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, r l =2.1 w , r gen =3 w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =7a m w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time gate source charge gate drain charge total gate charge switching parameters i s =1a,v gs =0v v ds =5v, i d =7a v gs =2.5v, i d =4a r ds(on) static drain-source on-resistance forward transconductance v gs =4.5v, i d =7a diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs , i d =250 m a v ds =30v, v gs =0v drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v gate-source breakdown voltage v ds =0v, i g =250ua v ds =0v, v gs =10v zero gate voltage drain current gate-body leakage current a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specifi c board design. the current rating is based on the steady state thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev5: july2011 AON5802B common-drain dual n-channel enhancement mode field effect transistor 2 / 5
typical electrical and thermal characteristics 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =2.5v v gs =4.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =7a v gs =2.5v i d =4a 0 10 20 30 40 50 60 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v i d =7a 25c 125c 0 10 20 30 40 50 0 1 2 3 4 5 vds (volts) fig 1: on-region characteristics i d (a) 3v 4.5v 2.5v v gs =2v 3.5v AON5802B common-drain dual n-channel enhancement mode field effect transistor 3 / 5
typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 1e-04 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- case (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss v ds =15v i d =7a single pulse d=t on /t t j,pk =t c +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m s 1s 10s AON5802B common-drain dual n-channel enhancement mode field effect transistor 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off AON5802B common-drain dual n-channel enhancement mode field effect transistor 5 / 5
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